elektronische bauelemente BCP869 pnp plastic encapsulated transistor 01-june-2004 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features the BCP869 is designed for application required for high cu rrent (maximum -1 a) and low voltage (maximum -20 v). package dimensions absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector-base voltage v cbo -32 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current -continuous i c -1 a collector dissipation p c 0.5 w junction & storage temperature t j , t stg 150, -55~150 c pnp electrical characteristics at ta = 25 c parameter symbol min. max. unit test conditions collector-base breakdown voltage v (br)cbo -32 - v i c =-0.1ma, i e =0 collector-emitter breakdown voltage v (br)ceo -20 - v i c = -1ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - v i e =-0.1ma, i c =0 collector cut-off current i cbo - -0.1 a v cb =-25v, i e =0 emitter cut-off current i ebo - -0.1 a v eb =-5 v, i c =0 h fe(1) 50 - v ce =-10v, i c = -5ma h fe(2) 100 375 v ce =-1v, i c = -500ma dc current gain h fe(3) 60 - v ce =-1v, i c = -1a base-emitter voltage vbe - -1 v v ce =-1v, i c = -1a collector-emitter saturation voltage v ce(sat) - -0.5 v i c =-1a, i b = -100ma transition frequency f t 40 - mhz v ce =-5v, i c =-10ma, f = 100mhz classification of hfe2 rank bc869 bc869-16 bc869-25 range 100 ? 375 100 - 250 160 ? 375 marking cec cgc chc millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g 3.00 ref. b 4.05 4.25 h 1.50 ref. c 1.50 1.70 i 0.40 0.52 d 1.30 1.50 j 1.40 1.60 e 2.40 2.60 k 0.35 0.41 f 0.89 1.20 l 5 typ. m0.70 ref. sot-89 g l j k h i a m e f b c d www..net
elektronische bauelemente BCP869 pnp plastic encapsulated transistor 01-june-2004 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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